Title :
High-performance and high-yield Ka-band low-noise MMIC using 0.25- mu m ion-implanted MESFET´s
Author :
Mondal, J. ; Detry, J. ; Geddes, J. ; Carlson, D.
Author_Institution :
SRC Honeywell, Bloomington, MN, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
The performance of LNA (low-noise amplifier) MMICs (monolithic microwave integrated circuits) in Ka-band using only ion-implantation technology is presented. Three-stage LNAs fabricated using a high-yield 0.25- mu m ion-implanted process showed a 4.2 dB average noise figure with a 15-dB gain in Ka-band. It is concluded that this relatively inexpensive technology, if maximized for the performance, shows good promise in applications where unit cost is critical and volume is high.<>
Keywords :
MMIC; Schottky gate field effect transistors; field effect integrated circuits; ion implantation; linear integrated circuits; microwave amplifiers; 0.25 micron; 15 dB; 4.2 dB; Ka-band; LNA; ion-implantation technology; low-noise MMIC; low-noise amplifier; monolithic microwave integrated circuits; Acoustic reflection; Circuits; Costs; Lithography; Low-noise amplifiers; MESFETs; MMICs; Noise figure; Optical amplifiers; Optical reflection;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
