Micromachined 28-GHz power divider in CMOS technology

Author

Ozgur, M. ; Zaghloul, M.E. ; Gaitan, M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., George Washington Univ., Washington, DC, USA

Volume

10

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

99

Lastpage

101

Abstract

A broad-band power divider is presented in CMOS technology. The devices are realized by postprocessing chips that are fabricated in a standard 1.2-μm CMOS process. Developed postprocessing includes wire bonding for ground equalization, deposition of a stress-compensation layer, and selective etching of the silicon substrate. By employing coupled coplanar transmission lines, the area of dividers is minimized to 0.8 mm×2.1 mm. A 20-35 GHz power divider exhibits a coupling of -3.8 dB/spl plusmn/0.6 dB.

Keywords

CMOS integrated circuits; coplanar transmission lines; coupled transmission lines; etching; lead bonding; micromachining; microwave devices; millimetre wave devices; power dividers; silicon; 1.2 micron; 20 to 35 GHz; 28 GHz; CMOS technology; Si; Si substrate; broadband power divider; coupled coplanar transmission lines; ground equalization; micromachined power divider; postprocessing; selective etching; stress-compensation layer deposition; wire bonding; Bonding; CMOS process; CMOS technology; Coplanar transmission lines; Coupling circuits; Fabrication; Impedance; Power dividers; Radio frequency; Stress;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.845710

Filename

845710