Title :
InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz
Author :
Lecourt, F. ; Ketteniss, N. ; Behmenburg, H. ; Defrance, N. ; Hoel, V. ; Eickelkamp, M. ; Vescan, A. ; Giesen, C. ; Heuken, M. ; De Jaeger, J.-C.
Author_Institution :
Microwave Power Devices Group, Lille Univ. of Sci. & Technol., Villeneuve d´´Ascq, France
Abstract :
In this letter, small- and large-signal measurements of an In0.15Al0.82N/AlN/GaN high-electron-mobility transistor (HEMT) grown on a sapphire substrate with a 225-nm T-shaped gate are described. A maximum dc current density of 1.2 A/mm and a peak extrinsic transconductance of 460 mS/mm are obtained. The device exhibits a current gain cutoff frequency (FT) and a power gain cutoff frequency (FMAX) of 52 and 120 GHz, respectively. At VDS = 15 V, a continuous-wave output power density of 2.9 W/mm was achieved at 18 GHz with an associated power-added efficiency of 28% and a power gain of 15 dB. It is the best value ever reported from InAlN/GaN HEMTs grown on a sapphire substrate.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; microwave transistors; sapphire; wide band gap semiconductors; HEMT; InAlN-GaN; T-shaped gate; current gain cutoff frequency; frequency 18 GHz; gain 15 dB; high-electron-mobility transistor; maximum DC current density; output power density; peak extrinsic transconductance; power gain cutoff frequency; sapphire substrate; size 225 nm; voltage 15 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Substrates; High-electron-mobility transistor (HEMT); InAlN/AlN/GaN; millimeter-wave transistor; power density;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2166949
