A numerical model of GaAs MESFETs including energy balance for microwave applications

Author

Yoganathan, S. ; Banerjee, S. ; Itoh, T. ; Shichijo, H. ; El-Ghazaly, S.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

1

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

175

Lastpage

177

Abstract

A novel decoupled solver has been developed that allows larger time steps than conventional decoupled Gummel algorithms and is less central processing unit (CPU) memory and time intensive than coupled Newton solvers. The order in which the quasi-hydrodynamic equations are solved exploits the large difference between the energy relaxation time, (typically 0.5 ps), and the dielectric relaxation time, tau /sub d/ (10 fs). The new decoupled scheme is numerically stable for time steps as large as 20* tau /sub d/. This makes it possible to reduce Cray Y-MP CPU times by 5-7 times compared to those required by conventional Gummel algorithms. This algorithm allows efficient analysis of GaAs MESFETs to study phenomena such as carrier heating near the drain, Gunn domain formation, and carrier injection into the semi-insulating substrate.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; electronic engineering computing; gallium arsenide; semiconductor device models; solid-state microwave devices; Cray Y-MP CPU times; GaAs; Gunn domain formation; MESFETs; carrier heating; carrier injection; decoupled solver; dielectric relaxation time; energy balance; energy relaxation time; microwave applications; numerical model; semi-insulating substrate; semiinsulating substrate; Cutoff frequency; Distributed decision making; Gallium arsenide; MESFETs; Microwave devices; Nonlinear equations; Numerical models; Poisson equations; Semiconductor process modeling; Steady-state;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.84574

Filename

84574