Title :
A Single-Chip Dual-Band 22–29-GHz/77–81-GHz BiCMOS Transceiver for Automotive Radars
Author :
Jain, Vipul ; Tzeng, Fred ; Zhou, Lei ; Heydari, Payam
Author_Institution :
Univ. of California at Irvine, Irvine, CA, USA
Abstract :
Integration of multi-mode multi-band transceivers on a single chip will enable low-cost millimeter-wave systems for next-generation automotive radar sensors. The first dual-band millimeter-wave transceiver operating in the 22-29-GHz and 77-81-GHz short-range automotive radar bands is designed and implemented in 0.18-¿ m SiGe BiCMOS technology with fT/fmax of 200/180 GHz. The transceiver chip includes a dual-band low noise amplifier, a shared downconversion chain, dual-band pulse formers, power amplifiers, a dual-band frequency synthesizer and a high-speed highly-programmable baseband pulse generator. The transceiver achieves 35/31-dB receive gain, 4.5/8-dB double side-band noise figure, >60/30-dB cross-band isolation, -114/-100.4-dBc/Hz phase noise at 1-MHz offset, and 14.5/10.5-dBm transmit power in the 24/79-GHz bands. Radar functionality is also demonstrated using a loopback measurement. The 3.9 × 1.9-mm2 24/79-GHz transceiver chip consumes 0.51/0.615 W.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; millimetre wave integrated circuits; road vehicle radar; sensors; transceivers; SiGe; baseband pulse generator; dualband frequency synthesizer; dualband low noise amplifier; dualband pulse formers; frequency 1 MHz; frequency 180 GHz; frequency 200 GHz; frequency 22 GHz to 29 GHz; frequency 77 GHz to 81 GHz; gain 31 dB; gain 35 dB; multimode multiband transceivers; next-generation automotive radar sensors; noise figure 4.5 dB; noise figure 8 dB; power 0.51 W; power 0.615 W; power amplifiers; shared downconversion chain; single-chip dualband BiCMOS transceiver; Automotive engineering; BiCMOS integrated circuits; Dual band; High power amplifiers; Low-noise amplifiers; Millimeter wave radar; Millimeter wave technology; Pulse amplifiers; Sensor systems; Transceivers; 24 GHz; 77 GHz; 79 GHz; Millimeter-wave integrated circuits; automotive radar; direct-conversion receiver; direct-conversion transmitter; dual-band; frequency conversion; frequency synthesizers; injection-locked oscillators; phase locked loops; pulse generator; pulsed radar;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2009.2032583
