Title :
Optically Assisted Charge Pumping on Floating-Body FETs
Author :
Kim, Sungho ; Choi, Sung-Jin ; Choi, Yang-Kyu
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
An optical charge-pumping (CP) method is proposed to extract the interface trap density in floating-body (FB) field-effect transistors (FETs). Optically generated majority carriers are removed from the FB by applying a burst of charge-pumping pulses to the gate. The change of the drain current after each CP pulse is used to determine the interface trap density. The advantage of this method lies in the possibility to characterize FB FETs without the unnecessary generation of interface traps by measurement bias. In addition, it can be applied to various types of FB devices directly without structural modification.
Keywords :
charge pump circuits; field effect transistors; interface states; CP pulse; FB devices; drain current; field-effect transistors; floating-body FET; interface trap density; optically-assisted charge pumping; Charge pumps; Current measurement; Electron devices; Logic gates; Optical pulses; Optical pumping; Optical variables measurement; Charge pumping (CP); floating-body (FB); interface trap; silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistor (MOSFET);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2072903
