Title :
A 30 GHz bandwidth AlGaAs-GaAs HBT direct-coupled feedback amplifier
Author :
Sheng, N.H. ; Ho, W.J. ; Wang, N.L. ; Pierson, R.L. ; Asbeck, P.M. ; Edwards, W.L.
Author_Institution :
Rockwell Int., Thousand Oaks, CA, USA
Abstract :
A DC to 30 GHz broadband amplifier based on the Darlington connected transistors with series and shunt resistive feedback was implemented with self-aligned AlGaAs-GaAs heterojunction bipolar transistor (HBT) technology. The measured performance shows 7.8 dB of gain with -3-dB roll-off bandwidth of 30 GHz. Measured at 1 GHz, the noise figure was 5.7 dB, 1-dB compression power was 11 dBm, and the third-order intermodulation product intercept point (IP3) was 23.9 dBm.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; feedback; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; wideband amplifiers; 30 GHz; 5.7 dB; 7.8 dB; AlGaAs-GaAs; Darlington connected transistors; HBT; broadband amplifier; direct-coupled; feedback amplifier; heterojunction bipolar transistor; self-aligned; series resistive feedback; shunt resistive feedback; Bandwidth; Broadband amplifiers; Feedback amplifiers; Gain measurement; Heterojunction bipolar transistors; Impedance; Microwave transistors; Noise figure; Resistors; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
