Title :
1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
Author :
Nakahara, Kouji ; Kondow, M. ; Kitatani, T. ; Larson, Michael C. ; Uomi, K.
Author_Institution :
RWCP Opt. Interconnection, Hitachi Ltd., Tokyo, Japan
fDate :
4/1/1998 12:00:00 AM
Abstract :
A 1.3-μm continuous wave lasing operation is demonstrated, for the first time, in a GaInNAs quantum-well laser at room temperature. This lasing performance is achieved by increasing the nitrogen content (up to 1%) in GaInNAs quantum layer. It is thus confirmed that this type of laser is suitable for use as a light source for optical fiber communications.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; 1.3 mum; GaInNAs; GaInNAs quantum layer; GaInNAs quantum-well lasers; continuous-wave lasing operation; lasing performance; light source; nitrogen content; optical fiber communications; optical transmitters; room temperature; Chemical lasers; Fiber lasers; Gallium arsenide; Nitrogen; Optical fiber communication; Pulsed laser deposition; Quantum well lasers; Semiconductor lasers; Substrates; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
