Title :
Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD
Author :
Jones, A.M. ; Coleman, J.J. ; Lent, B. ; Moore, A.H. ; Bonner, W.A.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
Aluminum-free buried-heterostructure quantum-well lasers have been successfully fabricated on low-composition InGaAs substrates. Selective-area metalorganic chemical vapor deposition (MOCVD) was utilized to investigate a variety of InGaAs quantum wells with a wide range of composition and thickness. Compressively strained quantum wells can be deposited thicker on substrates of InGaAs than GaAs before the generation of misfit dislocations. These deeper potential wells enable laser diodes with longer wavelengths (1.1504 μm) than GaAs-based emitters and higher characteristic temperatures (145 K) than InP-based devices.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical fabrication; optical transmitters; quantum well lasers; semiconductor growth; substrates; vapour phase epitaxial growth; 1.1504 mum; 145 K; GaAs-based emitters; InGaAs; InGaAs quantum wells; InGaAs-GaAs-InGaP; InP-based devices; aluminum-free buried-heterostructure quantum-well lasers; characteristic temperatures; compressively strained quantum wells; laser diodes; low-composition InGaAs substrate; low-composition InGaAs substrates; misfit dislocations; potential wells; selective-area MOCVD; selective-area metalorganic chemical vapor deposition; strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers; Chemical lasers; Chemical vapor deposition; Diode lasers; Gallium arsenide; Indium gallium arsenide; MOCVD; Potential well; Quantum well lasers; Substrates; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
