Title :
Characteristics of native-oxide-confined InGaP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well ridge waveguide lasers
Author :
Decai Sun ; Treat, D.W.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
We report 670-nm native-oxide confined GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well ridge waveguide laser diodes. The devices are fabricated from a compressively strained GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well separate confinement heterostructure laser structure. Wet chemical etching and wet oxidation process are used to form native oxide confined ridge waveguides. The oxidation process converts the p-Al/sub 0.5/In/sub 0.5/P cladding layer into AlO/sub x/ after ridge etch. Laser diodes of 3.5-μm-wide ridge waveguide operate with threshold currents below 13.5 mA and differential quantum efficiencies over 35%/facet.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; indium compounds; laser transitions; optical fabrication; oxidation; quantum well lasers; ridge waveguides; waveguide lasers; 13.5 mA; 3.5 mum; 670 nm; AlO/sub x/; GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well separate confinement heterostructure laser structure; InGaP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well ridge waveguide lasers; InGaP-AlGaInP; compressively strained; differential quantum efficiencies; native oxide confined ridge waveguides; native-oxide-confined; oxidation process; p-Al/sub 0.5/In/sub 0.5/P cladding layer; ridge etch; ridge waveguide; threshold currents; wet chemical etching; wet oxidation process; Chemical lasers; Diode lasers; Optical device fabrication; Optical waveguides; Oxidation; Quantum well lasers; Quantum wells; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
