DocumentCode :
1344096
Title :
Linear Characteristics of a Metal–Insulator Transition Voltage and Oscillation Frequency in \\hbox {VO}_{2} Devices
Author :
Kim, Bong-Jun ; Seo, Giwan ; Lee, Yong Wook ; Choi, Sungyoul ; Kim, Hyun-Tak
Author_Institution :
MIT Device Team, Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Volume :
31
Issue :
11
fYear :
2010
Firstpage :
1314
Lastpage :
1316
Abstract :
In order to apply a VO2 metal-insulator transition (MIT) device to a temperature sensor with temperature and voltage, we measure the linear characteristic of the MIT voltage for a VO2-based device when a pulse voltage of 10 μs is applied to the device to reduce Joule heat. Moreover, the MIT oscillation frequency and the infrared-induced MIT voltage also are linear with temperature. The linear characteristic may come from the breakdown of an energy gap by excitation.
Keywords :
metal-insulator transition; temperature sensors; vanadium compounds; Joule heat reduction; MIT oscillation frequency; MIT voltage linear characteristic; VO2; energy gap breakdown; infrared-induced MIT voltage; metal-insulator transition voltage device; pulse voltage; temperature sensor; time 10 mus; Neodymium; Oscillators; Semiconductor device measurement; Temperature dependence; Temperature measurement; Temperature sensors; Voltage measurement; Linear; metal–insulator transition (MIT); oscillation; temperature sensor;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2068275
Filename :
5595090
Link To Document :
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