Decrease of Dark Current by Reducing Transfer Transistor Induced Partition Noise With Localized Channel Implantation

Author

Park, Seong-Hyung ; Bok, Jung-Deuk ; Kwon, Hyuk-Min ; Choi, Woon-Il ; Ha, Man-Lyun ; Lee, Ju-Il ; Lee, Hi-Deok

Author_Institution

Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea

Volume

31

Issue

11

fYear

2010

Firstpage

1278

Lastpage

1280

Abstract

The local increase of the threshold voltage of the transfer transistor is proposed to reduce the dark current in a CMOS image sensor. It is suggested that the local increase of the threshold voltage controls the partition noise which contributes to the dark current. The dark current is shown to be reduced considerably by the proposed structure. The proposed method induces little change in the hot carrier reliability as well as in the device performance.

Keywords

CMOS image sensors; hot carriers; ion implantation; reliability; transistors; CMOS image sensor; dark current reduction; hot carrier reliability; localized channel implantation; partition noise control; threshold voltage; transfer transistor induced partition noise reduction; Dark current; Degradation; Logic gates; Noise; Performance evaluation; Pixel; Threshold voltage; CMOS image sensor (CIS); TX high VT length; dark current; hot pixels; partition noise; transfer gate (TX);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2070870

Filename

5595091