0.7 W X-Ku-band high-gain, high-efficiency common base power HBT

Author

Wang, N.L. ; Ho, W.J. ; Higgins, J.A.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

Volume

1

Issue

9

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

258

Lastpage

260

Abstract

Small sized AlGaAs-GaAs HBTs (heterojunction bipolar transistors) have achieved excellent power performance throughout the microwave frequency band. With the implementation of the multi-via-hole design, the HBT performance (gain and efficiency) is maintained as the size increases. A 0.7 W common-base (CB) power HBT with performance around 10 dB gain and 50% PAE well into the Ku band is reported. The performance is comparable to the pseudomorphic HEMT in this frequency range. The yield and uniformity are excellent. The high bias voltage (9.3 V V_ce) is also desirable from a system viewpoint

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; solid-state microwave devices; AlGaAs-GaAs; HBTs; bias voltage; common-base configuration; efficiency; gain; heterojunction bipolar transistors; microwave frequency band; multi-via-hole design; power performance; uniformity; yield; Bonding; Heterojunction bipolar transistors; Impedance; Inductance; Microwave bands; PHEMTs; Performance gain; Power generation; Radio frequency; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.84606

Filename

84606