Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact

Author

Song, June O. ; Ha, Jun-Seok ; Seong, Tae-Yeon

Author_Institution

Dept. of LED Bus., LG Innotek (LGIT), Gwangju, South Korea

Volume

57

Issue

1

fYear

2010

Firstpage

42

Lastpage

59

Abstract

GaN-based semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further improvement of LED performance can be achieved through the enhancement of external quantum efficiency. In this regard, high-quality p-type ohmic electrodes having low contact resistance and high transmittance (or reflectivity), along with thermal stability, must be developed because p-type ohmic contacts play a key role in the performance of LEDs. In this paper, we review recent advances in p-type ohmic-contact technology for GaN-based LEDs. A variety of methods for forming transparent and reflective ohmic contacts are introduced.

Keywords

III-V semiconductors; contact resistance; gallium compounds; light emitting diodes; ohmic contacts; semiconductor lasers; thermal stability; wide band gap semiconductors; GaN; contact resistance; laser diodes; light emitting diodes; optoelectronic devices; p-type ohmic contact; thermal stability; Contact resistance; Diode lasers; Electrodes; Light emitting diodes; Ohmic contacts; Optical device fabrication; Optoelectronic devices; Reflectivity; Thermal resistance; Thermal stability; Gallium nitride; light-emitting diodes (LEDs); transparent and reflective ohmic contacts;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2034506

Filename

5342486