Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS

Author

Jagannathan, Srikanth ; Gadlage, Matthew J. ; Bhuva, Bharat L. ; Schrimpf, Ronald D. ; Narasimham, Balaji ; Chetia, Jugantor ; Ahlbin, Jonathan R. ; Massengill, Lloyd W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci. (EECS), Vanderbilt Univ., Nashville, TN, USA

Volume

57

Issue

6

fYear

2010

Firstpage

3386

Lastpage

3391

Abstract

A novel circuit design for separating single-event transients due to N-hits and P-hits is described. Measurement results obtained from a 65 nm technology using heavy-ions show different dominant mechanisms for charge collection for P-hits and N-hits. The data collected represent the first such separation of SET pulse widths for 65 nm bulk CMOS technology. For low LET particles, N-hit transients are longer, but for high LET particles, P-hit transients are longer. N-well depth and the parasitic bipolar effect are shown to be the most important parameters affecting transient pulse widths.

Keywords

CMOS logic circuits; network synthesis; nuclear electronics; CMOS technology; N-hits; P-hits; SET pulse widths; heavy-ions; novel circuit design; parasitic bipolar effect; single-event transient; size 65 nm; CMOS integrated circuits; MOSFETs; Pulse measurements; Single event transient; Transient analysis; N-hits; P-hits; SET; pulse width; single event transient; soft error;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2076836

Filename

5595524