Title :
Comprehensive modeling of silicon microstrip detectors
Author :
Passeri, D. ; Ciampolini, P. ; Baroncini, M. ; Santocchia, A. ; Bilei, G.M. ; Checcucci, B. ; Fiandrini, E.
Author_Institution :
Ist. Nazionale di Fisica Nucl., Perugia, Italy
fDate :
6/1/1997 12:00:00 AM
Abstract :
In this work, the application of numerical device simulation to the analysis of high resistivity silicon microstrip detectors is illustrated. The analysis of DC, AC and transient responses of a single-sided, DC-coupled detector has been carried out, providing results in good agreement with experimental data. In particular, transient-mode simulation has been exploited to investigate the collection of charges generated by ionizing particles. To this purpose, an additional generation term has been incorporated into the transport equations; the motion of impact-generated carriers under the combined action of ohmic and diffusive forces is hence accounted for. Application to radiation tolerance studies is also introduced
Keywords :
numerical analysis; position sensitive particle detectors; radiation hardening (electronics); semiconductor device models; silicon radiation detectors; AC response; DC response; Si; Si microstrip detectors; diffusive forces; high resistivity microstrip detectors; impact-generated carriers; numerical device simulation; ohmic forces; radiation tolerance; single-sided DC-coupled detector; transient response; transport equations; Analytical models; Conductivity; Equations; Large Hadron Collider; Microstrip; Production; Radiation detectors; Semiconductor device packaging; Silicon radiation detectors; Transient analysis;
Journal_Title :
Nuclear Science, IEEE Transactions on