Comprehensive modeling of silicon microstrip detectors

Author

Passeri, D. ; Ciampolini, P. ; Baroncini, M. ; Santocchia, A. ; Bilei, G.M. ; Checcucci, B. ; Fiandrini, E.

Author_Institution

Ist. Nazionale di Fisica Nucl., Perugia, Italy

Volume

44

Issue

3

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

598

Lastpage

605

Abstract

In this work, the application of numerical device simulation to the analysis of high resistivity silicon microstrip detectors is illustrated. The analysis of DC, AC and transient responses of a single-sided, DC-coupled detector has been carried out, providing results in good agreement with experimental data. In particular, transient-mode simulation has been exploited to investigate the collection of charges generated by ionizing particles. To this purpose, an additional generation term has been incorporated into the transport equations; the motion of impact-generated carriers under the combined action of ohmic and diffusive forces is hence accounted for. Application to radiation tolerance studies is also introduced

Keywords

numerical analysis; position sensitive particle detectors; radiation hardening (electronics); semiconductor device models; silicon radiation detectors; AC response; DC response; Si; Si microstrip detectors; diffusive forces; high resistivity microstrip detectors; impact-generated carriers; numerical device simulation; ohmic forces; radiation tolerance; single-sided DC-coupled detector; transient response; transport equations; Analytical models; Conductivity; Equations; Large Hadron Collider; Microstrip; Production; Radiation detectors; Semiconductor device packaging; Silicon radiation detectors; Transient analysis;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.603718

Filename

603718