Title :
High-performance 670-nm AlGaInP/GaInP visible strained quantum well lasers
Author :
Su, Y.K. ; Li, W.L. ; Chang, S.J. ; Chang, C.S. ; Tsai, C.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
4/1/1998 12:00:00 AM
Abstract :
We have grown high-performance AlGaInP/GaInP visible (670 mn) strained quantum well lasers by low-pressure metalorganic chemical vapor deposition. With AlInP cladding layer, a high-power AlGaInP/GaInP visible laser diode is achieved. Its threshold current is about 30 mA. The output power of this laser diode can maintain, at least, at 32 mW under continuous-wave (CW) operation at room temperature. High slope efficiency (0.8 mW/mA) and differential quantum efficiency (0.87) can be achieved. To improve beam quality, AlGaInP/GaInP visible lasers with and without depressed index cladding layer are theoretically and experimentally studied. From experimental results, the transverse beam divergence can be reduced from 41.4° to 26.2° while maintaining a low threshold current (from 36 mA to 46 mA). By using the transfer matrix method, our theoretical calculations are in good agreement with the experimental results
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; 30 mA; 32 mW; 670 nm; AlGaInP-GaInP; AlGaInP/GaInP visible strained quantum well laser; AlInP cladding layer; CW output power; beam quality; differential quantum efficiency; high-power laser diode; low-pressure metalorganic chemical vapor deposition; room temperature operation; slope efficiency; threshold current; transfer matrix; transverse beam divergence; Chemical lasers; Diode lasers; High speed optical techniques; Laser beams; Laser theory; Optical recording; Optical refraction; Optical variables control; Quantum well lasers; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
