Simulation and measurement of multiplication in thin-film electroluminescent devices with doped probe layers

Author

Neyts, Kristiaan ; Corlatan, Dorina

Author_Institution

Dept. of Mater. Sci., California Univ., Berkeley, CA, USA

Volume

45

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

768

Lastpage

777

Abstract

When a single voltage pulse is applied to an electroluminescent (EL) device after previous illumination, the current through the phosphor layer will normally not be homogeneous, but increase from the cathodic side-where the electrons tunnel from-to the anodic side, due to multiplication. The positive charges that remain after the multiplication process cause a positive space charge that has been observed in various experiments and influences the efficiency. In this paper a simple numerical model is proposed for the calculation of charge transfer and light emission, in the case that multiplication takes place during a voltage pulse after previous illumination

Keywords

electroluminescent devices; optical films; phosphors; space charge; tunnelling; charge transfer; doped probe layer; efficiency; electron tunneling; illumination; inhomogeneous current; light emission; multiplication; numerical model; phosphor; simulation; space charge; thin-film electroluminescent device; voltage pulse; Capacitors; Electroluminescent devices; Electrons; Hysteresis; Phosphors; Probes; Pulse measurements; Space charge; Thin film devices; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.662774

Filename

662774