Title :
Development of a novel image intensifier of an amplified metal-oxide semiconductor imager overlaid with electron-bombarded amorphous silicon
Author :
Andoh, Fumihiko ; Kosugi, Mitsuo ; Kawamura, Tatsuro ; Araki, Shuichi ; Taketoshi, Kazuhisa
Author_Institution :
NHK Sci. & Tech. Res. Labs., Tokyo, Japan
fDate :
4/1/1998 12:00:00 AM
Abstract :
We developed a novel image intensifier (II) of an amplified metal-oxide-semiconductor (MOS) imager (AMI) overlaid with electron-bombarded (EB) amorphous silicon (a-Si). The electron bombardment gain (EB gain) was 1500 at an accelerating voltage of 10 kV. Since the multiplication process was free from a phosphorescent screen and a coupling fiber plate as in the conventional II, the resolution was high and the picture quality was good and free from granularity noises, white spots, lag and sticking. As for fatigue of X-ray irradiation, the contrasts of a vertical stripe (Smear) are not detectable and damaged areas in AMI are weak whereas both of those in charge-coupled devices (CCDs) are strong
Keywords :
MIS devices; amorphous semiconductors; electron bombarded semiconductor devices; elemental semiconductors; image intensifiers; image sensors; silicon; 10 kV; Si; Smear; X-ray irradiation; amplified MOS imager; contrast; electron bombardment gain; electron-bombarded amorphous silicon; fatigue; image intensifier; multiplication; picture quality; resolution; vertical stripe; Acceleration; Ambient intelligence; Amorphous silicon; Electrons; Fatigue; Image intensifiers; Phosphorescence; Voltage; White noise; X-ray detection;
Journal_Title :
Electron Devices, IEEE Transactions on
