Characterization of highly doped n- and p-type 6H-SiC piezoresistors

Author

Okojie, Robert S. ; Ned, Alexander A. ; Kurtz, Anthony D. ; Carr, William N.

Author_Institution

Kulite Semicond. Products Inc., Leonia, NJ, USA

Volume

45

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

785

Lastpage

790

Abstract

Highly doped (~2×10¹⁹ cm^-3) n- and p-type 6H-SiC strain sensing mesa resistors configured in Wheatstone bridge integrated beam transducers were investigated to characterize the piezoresistive and electrical properties. Longitudinal and transverse gauge factors, temperature dependence of resistance, gauge factor (GF), and bridge output voltage were evaluated. For the n-type net doping level of 2×10¹⁹ cm^-3 the bridge gauge factor was found to be 15 at room temperature and 8 at 250°C. For this doping level, a TCR of -0.24%/°C and -0.74%/°C at 100°C was obtained for the n- and p-type, respectively. At 250°C, the TCR was -0.14%/°C and -0.34%/°C, respectively. In both types, for the given doping level, impurity scattering is implied to be the dominant scattering mechanism. The results from this investigation further strengthen the viability of 6H-SiC as a piezoresistive pressure sensor for high-temperature applications

Keywords

bridge instruments; electric sensing devices; piezoresistive devices; semiconductor materials; silicon compounds; strain sensors; 20 to 250 degC; SiC; TCR; Wheatstone bridge integrated beam transducers; bridge output voltage; dominant scattering mechanism; impurity scattering; longitudinal gauge factors; net doping level; piezoresistors; pressure sensor; strain sensing mesa resistors; transverse gauge factors; Bridge circuits; Capacitive sensors; Doping; Electric resistance; Piezoresistance; Resistors; Scattering; Temperature dependence; Transducers; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.662776

Filename

662776