An analytical fully-depleted SOI MOSFET model considering the effects of self-heating and source/drain resistance

Author

Hu, Man-chun ; Jang, Sheng-Lyang

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan

Volume

45

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

797

Lastpage

801

Abstract

In this paper, we present a new and analytical drain current model for submicrometer SOI MOSFET´s applicable for circuit simulation. The model was developed by using a two-dimensional (2-D) Poisson equation, and considering the source/drain resistance and the self-heating effect. Using the present model, we can clearly see that the reduction of drain current with the parasitic series resistance and self-heating effect for typical SOI devices. We also can evaluate the impact of series resistance and self-heating effects. The accuracy of the presented model has been verified with the experimental data of SOI MOS devices with various geometries

Keywords

CMOS integrated circuits; MOSFET; SPICE; VLSI; circuit analysis computing; digital simulation; semiconductor device models; silicon-on-insulator; 2D Poisson equation; MOSFET model; circuit simulation; device geometries; drain current model; fully-depleted SOI MOSFET; parasitic series resistance; self-heating effects; source/drain resistance; Analytical models; Capacitance; Circuit simulation; Conductive films; MOS devices; MOSFET circuits; Poisson equations; Thin film circuits; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.662778

Filename

662778