Charge deposition distributions in targets irradiated by electrons

Author

Lazurik, Valentin ; Moskvin, Vadim

Author_Institution

Radiation Phys. Lab., Kharkov State Univ., Ukraine

Volume

44

Issue

3

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

1065

Lastpage

1069

Abstract

Charge deposition in targets consisting of materials with atomic numbers from 6 to 92 irradiated by normally impinging broad electron beams with energies from 0.1 to 10 keV is studied. Using the modification of trajectory rotation method [Nucl. Instr. and Meth. B 108 (1996) 276], the data on primary electron charge deposition distributions in the targets are obtained. The mechanism of charge deposition distribution shaping in small-size spatial regions in a target is analyzed. The role of stochastic wandering of electrons in charge deposition near inhomogeneities in a target is discussed. It is noted that ignoring the electron stochastic wandering may lead to artifacts in calculations and erroneous conclusions about charge deposition near interfaces in heterogeneous targets

Keywords

Monte Carlo methods; charge exchange; electron beam effects; energy loss of particles; stochastic processes; 0.1 to 10 MeV; broad electron beams; charge deposition distributions; electron irradiated targets; electron stochastic wandering; heterogeneous targets; inhomogeneities; primary electron charge deposition distributions; stochastic wandering; targets; Atomic beams; Atomic layer deposition; Atomic measurements; Data analysis; Electron beams; Fitting; Laboratories; Monte Carlo methods; Physics; Stochastic processes;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.603805

Filename

603805