DocumentCode
1345432
Title
A continuous compact MOSFET model for fully- and partially-depleted SOI devices
Author
Sleight, Jeffrey W. ; Rios, Rafael
Author_Institution
Technol. Dev. Group, Digital Semiconductor, Hudson, MA, USA
Volume
45
Issue
4
fYear
1998
fDate
4/1/1998 12:00:00 AM
Firstpage
821
Lastpage
825
Abstract
A fully continuous compact SOI MOSFET model for circuit simulations, that automatically accounts for the for the correct body depletion condition, is presented. Unlike previously reported models that are derived for either fully-depleted (FD) or partially-depleted (PD) devices, our model accounts for the possible transitions between FD and PD behavior during the device operation
Keywords
MOSFET; semiconductor device models; silicon-on-insulator; body depletion; circuit simulation; continuous compact SOI MOSFET model; fully-depleted device; partially-depleted device; Body regions; Circuit simulation; Doping; Electrostatics; MOS devices; MOSFET circuits; Poisson equations; Semiconductor process modeling; Substrates; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.662786
Filename
662786
Link To Document