Title :
Analysis of quantum effects in nonuniformly doped MOS structures
Author :
Fiegna, Claudio ; Abramo, Antonio
Author_Institution :
Dipt. di Ingegneria, Ferrara Univ., Italy
fDate :
4/1/1998 12:00:00 AM
Abstract :
This paper presents results from the self-consistent solution of Schrodinger and Poisson equations obtained in one-dimensional (1-D) nonuniformly doped MOS structures suitable for the fabrication of very short transistors. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles suitable for the fabrication of ultrashort MOSFETs
Keywords :
MIS structures; MOSFET; doping profiles; Poisson equation; Schrodinger equation; capacitance; electron effective mobility; n-MOS channel doping profile; one-dimensional nonuniformly doped MOS structure; quantum effects; self-consistent solution; threshold voltage; ultrashort MOSFET fabrication; Doping profiles; Electron mobility; Fabrication; MOSFETs; Poisson equations; Quantization; Quantum capacitance; Semiconductor process modeling; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
