Title :
CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology
Author :
Wong, Hon-Sum Philip ; Chang, Richard T. ; Crabbé, Emmanuel ; Agnello, Paul D.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
This paper reports the experimental results of the first CMOS active pixel image sensors (APS) fabricated using a high-performance 1.8-V, 0.25-μm CMOS logic technology. No process modifications were made to the CMOS logic technology so that the impact of device scaling on the image sensing performance can be studied. This paper highlights the device and process design considerations required to enable CMOS as an image sensor technology
Keywords :
CMOS integrated circuits; image sensors; integrated circuit technology; sensitivity; 0.25 micron; 1.8 V; CMOS active pixel image sensors; CMOS logic technology; device scaling; image sensing performance; submicron CMOS technology; CMOS image sensors; CMOS logic circuits; CMOS process; CMOS technology; Charge coupled devices; Image sensors; Isolation technology; Logic devices; Pixel; Switches;
Journal_Title :
Electron Devices, IEEE Transactions on
