DocumentCode
1345533
Title
A multicomb variance reduction scheme for Monte Carlo semiconductor simulators
Author
Gray, Mark G. ; Booth, Thomas E. ; Kwan, Thomas J.T. ; Snell, Charles M.
Author_Institution
Los Alamos Nat. Lab., NM, USA
Volume
45
Issue
4
fYear
1998
fDate
4/1/1998 12:00:00 AM
Firstpage
918
Lastpage
924
Abstract
We adapt a multicomb variance reduction technique used in neutral particle transport to Monte Carlo micro-electronic device modeling. We implement the method in a two-dimensional (2-D) MOSFET device simulator and demonstrate its effectiveness in the study of hot electron effects. Our simulations show that the statistical variance of hot electrons is significantly reduced with minimal computational cost. The method is efficient, versatile, and easy to implement in existing device simulators
Keywords
MOSFET; Monte Carlo methods; hot carriers; semiconductor device models; Monte Carlo semiconductor simulator; hot electron effects; importance sampling; microelectronic device model; multicomb variance reduction; neutral particle transport; particle comb; population control; two-dimensional MOSFET device simulator; Computational modeling; Electrons; Electrostatics; Fluctuations; Microelectronics; Monte Carlo methods; Particle scattering; Phase estimation; Semiconductor devices; Steady-state;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.662803
Filename
662803
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