Title :
A multicomb variance reduction scheme for Monte Carlo semiconductor simulators
Author :
Gray, Mark G. ; Booth, Thomas E. ; Kwan, Thomas J.T. ; Snell, Charles M.
Author_Institution :
Los Alamos Nat. Lab., NM, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
We adapt a multicomb variance reduction technique used in neutral particle transport to Monte Carlo micro-electronic device modeling. We implement the method in a two-dimensional (2-D) MOSFET device simulator and demonstrate its effectiveness in the study of hot electron effects. Our simulations show that the statistical variance of hot electrons is significantly reduced with minimal computational cost. The method is efficient, versatile, and easy to implement in existing device simulators
Keywords :
MOSFET; Monte Carlo methods; hot carriers; semiconductor device models; Monte Carlo semiconductor simulator; hot electron effects; importance sampling; microelectronic device model; multicomb variance reduction; neutral particle transport; particle comb; population control; two-dimensional MOSFET device simulator; Computational modeling; Electrons; Electrostatics; Fluctuations; Microelectronics; Monte Carlo methods; Particle scattering; Phase estimation; Semiconductor devices; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
