Title :
Light-hadron induced SER and scaling relations for 16- and 64-Mb DRAMS
Author :
Hofman, G.J. ; Peterson, R.J. ; Gelderloos, C.J. ; Ristinen, R.A. ; Nelson, M.E. ; Thompson, A. ; Ziegler, J.F. ; Mullfeld, H.
Author_Institution :
Nucl. Phys. Lab., Colorado Univ., Boulder, CO, USA
fDate :
4/1/2000 12:00:00 AM
Abstract :
We report on soft error rates (SER) of 16 and 64 Mb dynamic memory chips induced by three types of elementary particles, neutrons, protons, and pions, with emphasis on results obtained with pion beams. Significant SER differences, up to a factor 1000, are seen between various manufacturers and cell technologies. We discuss reaction mechanisms and by comparing SER rates to nuclear reaction cross sections present guidelines for predicting failure rates
Keywords :
DRAM chips; meson effects; neutron effects; proton effects; radiation hardening (electronics); 16 MB; 64 MB; circuit design; failure rates; light-hadron induced soft error rates; memory testing; neutrons; nuclear reaction cross sections; pions; protons; reaction mechanisms; scaling relations; Error analysis; Mesons; Neutrons; Particle beams; Pollution measurement; Protons; Random access memory; Sea measurements; Semiconductor device measurement; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
