Title :
Technology and characterization of diamond field emitter structures
Author :
Hong, Dongsung ; Aslam, Dean M.
Author_Institution :
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
In an effort to develop diamond field emitters with high current densities, diamond film technology compatible with Si integrated circuits is used to design new experiments for a systematic study of field emission as a function of sp3/sp2 ratio, grain size, doping level, patterning, field enhancement at the grain tips, and anode to emitter separation. Boron-doped polycrystalline diamond films with low sp3/sp2 ratios, high density of small grains and grain boundaries, and patterned structures result in high current densities and low emission fields. Electric fields to initiate emission, measured at J=0.01 mAcm-2, are in the range of 0.1-0.4 MV/cm depending upon diamond growth conditions. The results of this study have important consequences for diamond triode field emitter displays
Keywords :
boron; current density; diamond; display devices; doping profiles; electric fields; electron field emission; elemental semiconductors; grain boundaries; grain size; semiconductor thin films; vacuum microelectronics; B-doped polycrystalline diamond films; C:B; anode to emitter separation; characterization; diamond field emitter structures; diamond film technology; doping level; electric fields; field enhancement; grain boundaries; grain size; grain tips; high current densities; low emission fields; patterning; triode field emitter displays; Anodes; Chemical vapor deposition; Current density; Doping; Electron emission; Flat panel displays; Grain boundaries; Grain size; Integrated circuit technology; Semiconductor films;
Journal_Title :
Electron Devices, IEEE Transactions on
