• DocumentCode
    1345608
  • Title

    An analytical model for the electron velocity overshoot effects in strained-Si on SixGe1-x MOSFETs

  • Author

    Roldán, J.B. ; Gamiz, Francisco ; López-Villanueva, J.A. ; Carceller, J.E.

  • Author_Institution
    Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain
  • Volume
    45
  • Issue
    4
  • fYear
    1998
  • fDate
    4/1/1998 12:00:00 AM
  • Firstpage
    993
  • Lastpage
    995
  • Abstract
    We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on SixGe 1-x MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model
  • Keywords
    Ge-Si alloys; MOSFET; Monte Carlo methods; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; MOSFETs; Monte Carlo simulator; Si-SiGe; analytical model; deep submicron devices; electron velocity overshoot effects; strained-Si on SixGe1-x; transconductance improvement; Analytical models; Boron; CMOS technology; Electrons; Indium; MOS devices; MOSFET circuits; Semiconductor films; Transconductance; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.662819
  • Filename
    662819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1345608