DocumentCode :
1345811
Title :
Acceleration Factors for IC Leakage Current in a Steam Environment
Author :
Weick, W.W.
Author_Institution :
Room 2B-123, Bell Laboratories; Murray Hill, New Jersey 07974 USA.
Issue :
2
fYear :
1980
fDate :
6/1/1980 12:00:00 AM
Firstpage :
109
Lastpage :
115
Abstract :
Leakage current measurements were made across the surface of silicon test chips up to a temperature of 130°C (403°K) and 70% relative humidity (RH) to develop a more accelerated temperature-humidity-bias corrosion test. Several equations were fitted to the data in order to extrapolate the surface conductivity data to operating conditions. A smooth transistion from atmospheric pressure into the pressurized steam region was observed. The leakage current acceleration factor is the same at 130°C/60%RH and 85°C/85%RH for bare gold electrodes. For nitride-covered aluminum conductors the equlvalent conditions are 130°C/65%RH or 85°C/85%RH. The advantage in the steam region is a larger temperature differential between the sample and saturation; approximately 15°C as opposed to 4°C for the 85°C/85%RH. This makes the steam test easier to control, but might raise the temperature beyond the decomposition limits for organic packaging materials. For inorganic systems with nitride-covered aluminum electrodes, an acceleration by a factor of three compared to 85°%C/85%RH can be obtained at 140°C/70%RH or 17°C/60%RH. Coefficients were determined by multiple regression analysis for three forms of equations which express the surface conductivity in terms of reciprocal absolute temperature and RH. The acceleration factors determined by a power law are consistently lower than those determined by two forms of an exponential equation.
Keywords :
Acceleration; Aluminum; Conductivity; Current measurement; Electrodes; Equations; Humidity measurement; Leakage current; Temperature; Testing; Accelerated testing; Humidity; Leakage current;
fLanguage :
English
Journal_Title :
Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9529
Type :
jour
DOI :
10.1109/TR.1980.5220744
Filename :
5220744
Link To Document :
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