Title :
Spectroscopic measurement of mounting-induced strain in optoelectronic devices
Author :
Bärwolff, Artur ; Tomm, Jens W. ; Müller, Roland ; Weiß, Stefan ; Hutter, Matthias ; Oppermann, Hermann ; Reichl, Herbert
Author_Institution :
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany
fDate :
5/1/2000 12:00:00 AM
Abstract :
Mounting-induced strain in high-power laser diodes is studied by noninvasive photocurrent (PC) spectroscopy. We demonstrate that the strain can be determined with high accuracy by means of Fourier-transform (FT) photocurrent measurements. The optical transitions within the quantum well (QW) region of identical InAlGaAs/GaAs laser diodes which were mounted with different external strain have shown spectral shifts of up to 10 meV. The accuracy of the energy level shifts obtained by FT PC measurements is of 150 μ eV for the QW-region and 500 μeV for the waveguide region. The measured strain status of the active region is compared with model calculations to quantify the amount of strain which is transferred from the heat sink to the semiconductor device
Keywords :
Fourier transform spectroscopy; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser variables measurement; photoconductivity; quantum well lasers; semiconductor device packaging; strain measurement; Fourier transform photocurrent spectroscopy; InAlGaAs-GaAs; energy level shift; heat sink; high power laser diode; mounting-induced strain; noninvasive measurement; optical transition; optoelectronic device; quantum well; semiconductor device; waveguide; Capacitive sensors; Diode lasers; Energy measurement; Energy states; Gallium arsenide; Optical waveguides; Photoconductivity; Semiconductor waveguides; Spectroscopy; Strain measurement;
Journal_Title :
Advanced Packaging, IEEE Transactions on
DOI :
10.1109/6040.846629
