• DocumentCode
    1346071
  • Title

    Memory Devices: Energy–Space–Time Tradeoffs

  • Author

    Zhirnov, Victor V. ; Cavin, Ralph K., III ; Menzel, Stephan ; Linn, Eike ; Schmelzer, Sebastian ; Braühaus, Dennis ; Schindler, Christina ; Waser, Rainer

  • Author_Institution
    Semicond. Res. Corp., Durham, NC, USA
  • Volume
    98
  • Issue
    12
  • fYear
    2010
  • Firstpage
    2185
  • Lastpage
    2200
  • Abstract
    Many memory candidates based on beyond complementary metal-oxide-semiconductor (CMOS) nanoelectronics have been proposed, but no clear successor has yet been identified. In this paper, we offer a methodology for system-level analysis and address the relationship of the maximum performance of a given memory device type to device physics. The method is illustrated for the classical dynamic RAM (DRAM) device and for the emerging memory device known as the resistive RAM (ReRAM).
  • Keywords
    CMOS memory circuits; nanoelectronics; random-access storage; DRAM device; ReRAM; beyond CMOS nanoelectronics; complementary metal-oxide-semiconductor; dynamic RAM; energy-space-time tradeoffs; memory devices; resistive RAM; Arrays; Capacitance; Capacitors; FETs; Nanoelectronics; Random access memory; Switches; Dynamic RAM (DRAM); fundamental limits; memory; nanodevices; resistive RAM (ReRAM);
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2010.2064271
  • Filename
    5597913
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1346071