A GaAs HBT 16×16 10-Gb/s/channel crosspoint switch

Author

Lowe, Kerry S.

Author_Institution

Nortel Technol., Ottawa, Ont., Canada

Volume

32

Issue

8

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

1263

Lastpage

1268

Abstract

A 16×16 crosspoint switch IC has been designed and implemented in a 2-μm GaAs heterojunction bipolar transistor (HBT) technology. The IC is a strictly nonblocking switch with broadcast capability and asynchronous data paths. The IC has fully differential internal circuitry and is packaged in a custom high-speed assembly. Test results confirmed that the IC achieves a 10-Gb/s/channel (or 160-Gb/s aggregate) capacity, the highest reported to date for a 16×16 crosspoint switch IC

Keywords

III-V semiconductors; bipolar digital integrated circuits; electronic switching systems; gallium arsenide; heterojunction bipolar transistors; 10 Gbit/s; 160 Gbit/s; 2 micron; GaAs; GaAs HBT crosspoint switch IC; asynchronous data path; broadcasting; custom high-speed assembly package; differential internal circuitry; heterojunction bipolar transistor technology; nonblocking switch; Assembly; Bipolar integrated circuits; Broadcasting; Circuit testing; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Integrated circuit packaging; Integrated circuit testing; Switches;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.604084

Filename

604084