DocumentCode :
1346090
Title :
High-Quality \\hbox {Al}_{2}\\hbox {O}_{3} for Low-Voltage High-Speed High-Temperature (Up to 250 ^{\\circ}</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Cui, Sharon ; Peng, Cheng-Yi ; Zhang, Wenqi ; Sun, Xiao ; Yang, Jie ; Liu, Zuoguang ; Kornblum, Lior ; Eizenberg, Moshe ; Ma, T.P.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>31</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>12</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2010</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1443</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1445</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>We report the properties of a MANAS (Metal/Al<sub>2</sub>O<sub>3</sub>/Nitride/Al<sub>2</sub>O<sub>3</sub>/Si) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality Al<sub>2</sub>O<sub>3</sub> deposited by the molecular-atomic-deposition (MAD) technique. Compared with state-of-the-art MANOS (Metal/Al<sub>2</sub>O<sub>3</sub>/Nitride/SiO<sub>2</sub>/Si) and its derivatives, the MANAS structure features the following: 1) low-voltage/high-speed operation; 2) fabrication simplicity; and 3) high-temperature retention up to 250°C. These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the MAD_Al<sub>2</sub>O<sub>3</sub>, as well as its relatively high conduction band offset and low valence band offset.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>aluminium compounds; flash memories; high-temperature electronics; low-power electronics; Al<sub>2</sub>O<sub>3</sub>; MAD technique; MAD_Al<sub>2</sub>O<sub>3</sub>; MANAS charge-trap memory cell structure; blocking dielectrics; conduction band offset; low-voltage high-speed high-temperature nonvolatile memory technology; molecular atomic deposition technique; tunnel dielectrics; valence band offset; Aluminum oxide; High-temperature techniques; Logic gates; Nonvolatile memory; Programming; Transistors; Tunneling; Aluminum oxide; MANAS; TANOS; charge-trap memory; high-temperature retention; nonvolatile memory; tunnel dielectric;</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Device Letters, IEEE</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0741-3106</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/LED.2010.2072902</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>5597916</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1346090' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1346090</a></div> </div> </div> <div class='leftDiv labelDiv leftAlign backLinkEnglish'><a href='javascript:history.back()'><img src='../CSS/Back.png' class='backImage' alt=