Title :
Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode
Author :
Yang, Hua ; Daunt, Chris L L M ; Gity, Farzan ; Lee, Ko-Hsin ; Han, Wei ; Corbett, Brian ; Peters, Frank H.
Author_Institution :
Tyndall Nat. Inst., Cork, Ireland
Abstract :
The traveling-wave edge-coupled unitraveling-carrier (UTC) photodiode was designed and fabricated for zero-bias high-speed communication system application. A 40-μm-long 5-μm-wide UTC waveguide device demonstrated 13-GHz 3-dB bandwidth and up to 10-mA photocurrent without saturation in our measurement range under zero bias.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microwave diodes; microwave photonics; optical waveguides; photoconductivity; photodiodes; travelling wave tubes; InGaAs; UTC waveguide device; bandwidth 13 GHz; current 10 mA; photocurrent; size 40 mum; size 5 mum; traveling-wave edge-coupled photodiode; unitraveling-carrier photodiode; zero-bias high-speed communication system; Absorption; Doping; Indium gallium arsenide; Optical waveguides; Photodiodes; Semiconductor process modeling; High saturation power; high speed; photodiode (PD); unitraveling carrier (UTC); zero bias;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2085041
