DocumentCode
1346190
Title
Effect of the Phosphor Geometry on the Luminous Flux of Phosphor-Converted Light-Emitting Diodes
Author
Yu, Renyong ; Jin, Shangzhong ; Cen, Songyuan ; Liang, Pei
Author_Institution
Coll. of Opto-Electron. Eng., China Jiliang Univ., Hangzhou, China
Volume
22
Issue
23
fYear
2010
Firstpage
1765
Lastpage
1767
Abstract
The effect of the phosphor geometry on the luminous flux of phosphor-converted light-emitting diodes (pcLEDs) is analyzed. Five phosphor geometries are investigated based on ray-tracing simulations. Results show that the curvature of the convex surface is an important factor to influence the luminous flux, and the remote-phosphor pcLED with the phosphor layer of a hemispherically top surface can achieve an improvement of more than 12% compared with the conventional dispersed-coating pcLED.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; phosphors; photoluminescence; ray tracing; semiconductor quantum wells; wide band gap semiconductors; GaN; LED; Si; hemispheric top surface; luminous flux; multiple quantum-well; phosphor-converted light-emitting diodes; ray tracing simulations; Geometry; Light emitting diodes; Phosphors; Photonics; Surface treatment; Geometry; light-emitting diode (LED); luminous flux; phosphor;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2010.2085080
Filename
5597931
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