Title :
Effect of the Phosphor Geometry on the Luminous Flux of Phosphor-Converted Light-Emitting Diodes
Author :
Yu, Renyong ; Jin, Shangzhong ; Cen, Songyuan ; Liang, Pei
Author_Institution :
Coll. of Opto-Electron. Eng., China Jiliang Univ., Hangzhou, China
Abstract :
The effect of the phosphor geometry on the luminous flux of phosphor-converted light-emitting diodes (pcLEDs) is analyzed. Five phosphor geometries are investigated based on ray-tracing simulations. Results show that the curvature of the convex surface is an important factor to influence the luminous flux, and the remote-phosphor pcLED with the phosphor layer of a hemispherically top surface can achieve an improvement of more than 12% compared with the conventional dispersed-coating pcLED.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; phosphors; photoluminescence; ray tracing; semiconductor quantum wells; wide band gap semiconductors; GaN; LED; Si; hemispheric top surface; luminous flux; multiple quantum-well; phosphor-converted light-emitting diodes; ray tracing simulations; Geometry; Light emitting diodes; Phosphors; Photonics; Surface treatment; Geometry; light-emitting diode (LED); luminous flux; phosphor;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2085080
