Additional modal selectivity induced by a localized defect in quarter-wave-shifted DFB lasers

Author

Fessant, Thierry ; Boucher, Yann

Author_Institution

Lab. RESO, Ecole Nat. Superieure d´´Ingenieurs, Brest, France

Volume

34

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

602

Lastpage

608

Abstract

The effects of a localized impurity upon the threshold spectral properties of quarter-wave-shifted distributed feedback (QWS-DFB) lasers are analyzed. The singularity, which can exhibit absorbing, dephasing, as well as reflecting properties, is mathematically described by a transfer matrix so that its inclusion in the usual matrix formalism of coupled-wave equations is easy. The exact location of the singularity, its strength, as well as the grating phase with respect to the origin are found to affect greatly the modal behavior of the structure. The localized defect interacts differently with each mode due to their intracavity stationary field pattern, so that a modally selective center is produced. A correct optimization of the singularity parameters thus enables an enhancement of the laser performance

Keywords

coupled mode analysis; distributed feedback lasers; impurities; laser modes; laser theory; optimisation; semiconductor device models; semiconductor lasers; absorbing; additional modal selectivity; correct optimization; coupled-wave equations; dephasing; intracavity stationary field pattern; laser performance; localized defect; localized impurity; matrix formalism; modal behavior; modally selective center; quarter-wave-shifted DFB lasers; reflecting properties; singularity; singularity parameters; threshold spectral properties; transfer matrix; Coupled mode analysis; Distributed feedback devices; Equations; Frequency; Gratings; Laser feedback; Laser modes; Optical scattering; Semiconductor impurities; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.663433

Filename

663433