Title :
A simplified approach to time-domain modeling of avalanche photodiodes
Author :
Bandyopadhyay, A. ; Deen, M. Jamal ; Tarof, L.E. ; Clark, W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
A simplified algorithm for calculating time response of avalanche photodiodes (APDs) is presented. The algorithm considers the time course of avalanche processes for the general case of position-dependent double-carrier multiplications including the dead space effect. The algorithm is based on a discrete time setting ideally suited for computer modeling and can be applied to any APD structure. It gives a fast and accurate estimation of the time and frequency response of APDs. As an example, the present method is applied to InP-InGaAs separate absorption, grading, charge, and multiplication (SAGCM) APDs. The variation of multiplication pain with bias voltage and 3-dB electrical bandwidth at different multiplication gain obtained using the new algorithm show good agreement with experimental results. The algorithm can be used to study temperature dependence of APD characteristics and can be easily extended to calculate the excess noise factor
Keywords :
avalanche photodiodes; frequency response; gallium arsenide; indium compounds; optical noise; semiconductor device models; APD structure; InP-InGaAs separate absorption grading charge and multiplication avalanche photodiode time domain model; avalanche photodiodes; computer modeling; dead space effect; discrete time setting; excess noise factor; frequency response; position-dependent double-carrier multiplications; simplified algorithm; time response; time-domain modeling; Absorption; Avalanche photodiodes; Bandwidth; Frequency estimation; Frequency response; Pain; Temperature dependence; Time domain analysis; Time factors; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
