1-GHz Monolithically Integrated Hybrid Mode-Locked InP Laser

Author

Cheung, Stanley ; Baek, Jong-Hwa ; Scott, Ryan P. ; Fontaine, Nicolas K. ; Soares, Francisco M. ; Zhou, Xiaoping ; Baney, Douglas M. ; Ben Yoo, S.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California at Davis, Davis, CA, USA

Volume

22

Issue

24

fYear

2010

Firstpage

1793

Lastpage

1795

Abstract

This letter demonstrates a 1-GHz hybrid mode-locked monolithic semiconductor laser fabricated on indium phosphide. Its operating regimes are explored and optical pulses as short as 36 ps were measured. The linear cavity is 41 mm long with integrated active quantum well and passive waveguide structures. To our knowledge, this is the lowest reported repetition rate for a monolithically integrated mode-locked semiconductor laser. We further describe optimization steps of the saturable absorber reverse bias, driving RF frequency, and the semiconductor optical amplifier gain current for minimal output pulsewidth.

Keywords

III-V semiconductors; indium compounds; integrated optoelectronics; laser mode locking; optical saturable absorption; optical waveguides; optimisation; semiconductor optical amplifiers; InP; frequency 1 GHz; hybrid mode-locked laser; indium phosphide; integrated active quantum well; linear cavity; monolithically integrated mode-locked semiconductor laser; optical pulse; optimization; passive waveguide structures; saturable absorber reverse bias; semiconductor optical amplifier; Cavity resonators; Laser mode locking; Optical mixing; Optical pulses; Optical waveguides; Radio frequency; Semiconductor lasers; Integrated photonic devices; mode-locked lasers (MLLs); optical pulses; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2086050

Filename

5598511