A dual-metal-trench Schottky pinch-rectifier in 4H-SiC

Author

Schoen, K.J. ; Henning, J.P. ; Woodall, J.M. ; Cooper, J.A., Jr. ; Melloch, M.R.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

19

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

97

Lastpage

99

Abstract

Characteristics of high-voltage dual-metal-trench (DMT) SiC Schottky pinch-rectifiers are reported for the first time. At a reverse bias of 300 V, the reverse leakage current of the SiC DMT device is 75 times less than that of a planar device while the forward bias characteristics remain comparable to those of a planar device. In this work, 4H-SiC pinch-rectifiers have been fabricated using a small/large barrier height (Ti/Ni) DMT device structure. The DMT structure is specially designed to permit simple fabrication in SiC. The Ti Schottky contact metal serves as a self-aligned trench etch mask and only four basic fabrication steps are required.

Keywords

Schottky diodes; leakage currents; power semiconductor diodes; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 300 V; 4H-SiC; Ni-Ti-SiC; Schottky pinch-rectifier; Ti Schottky contact metal; Ti/Ni device structure; dual-metal-trench HV rectifier; fabrication; forward bias characteristics; high-voltage rectifier; reverse leakage current; self-aligned trench etch mask; Contacts; Etching; Fabrication; Leakage current; Medical simulation; OFDM modulation; P-n junctions; Rectifiers; Schottky barriers; Silicon carbide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.663526

Filename

663526