Nonscaling of MOSFET´s linear resistance in the deep submicrometer regime

This paper investigates the scaling properties of deep submicron MOSFET´s and shows that, while in a wide range of channel lengths they can be represented as composed by a scaling intrinsic and a nonscaling parasitic part, this picture does no longer hold for shorter transistors. A nonscaling of the total resistance R/sub TOT/=[V/sub DS//I/sub DS/] of short devices is observed, and its impact on parasitic resistances and effective channel length extraction is discussed. A possible explanation is suggested in relation to the two-dimensional substrate doping redistribution linked to reverse-short-channel effects.