A Si/SiGe HBT dielectric resonator push-push oscillator at 58 GHz

Author

Sinnesbichler, Franz X. ; Hautz, Bernhard ; Olbrich, Gerhard R.

Author_Institution

Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany

Volume

10

Issue

4

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

145

Lastpage

147

Abstract

In this work, we present a dielectric resonator push-push oscillator at 58 GHz. The microstrip circuit is fabricated in hybrid thin-film technology on a 10 mil alumina substrate. Flip-chip bonded Si/SiGe HBT´s are used as active devices. A maximum output power of -8 dBm and a phase noise of -105 dBc/Hz at an offset frequency of 1 MHz have been measured. At a lower output power of -14 dBm an optimum phase noise of -112 dBc/Hz has been achieved. The mechanical tuning range of the oscillator is approximately 500 MHz

Keywords

Ge-Si alloys; circuit tuning; dielectric resonator oscillators; elemental semiconductors; flip-chip devices; heterojunction bipolar transistors; hybrid integrated circuits; microstrip circuits; millimetre wave integrated circuits; millimetre wave oscillators; semiconductor materials; silicon; thin film circuits; variable-frequency oscillators; 10 mil; 58 GHz; Al₂O₃; EHF; HBT DR push-push oscillator; MM-wave IC; Si-SiGe; alumina substrate; dielectric resonator modelling; flip-chip bonded HBTs; hybrid thin-film technology; mechanical tuning range; microstrip circuit; phase noise; push-pull DRO; Circuits; Dielectric substrates; Dielectric thin films; Germanium silicon alloys; Heterojunction bipolar transistors; Microstrip; Oscillators; Phase noise; Power generation; Silicon germanium;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.846927

Filename

846927