Potential and modeling of 1-μm SOI CMOS operational transconductance amplifiers for applications up to 1 GHz

Author

Eggermont, Jean-Paul ; Flandre, Denis ; Raskin, Jean-Pierre ; Colinge, Jean-Pierre

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Belgium

Volume

33

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

640

Lastpage

643

Abstract

The potential of 1-μm SOI complementary metal-oxide-semiconductor (CMOS) technology for the realization of operational transconductance amplifiers (OTAs) with transition frequencies in the gigahertz range is demonstrated. High-frequency device models, design guidelines and frequency limitations are detailed, as well as layout and technology improvements which can be used to boost the transconductance at high frequency and to reduce the source/drain-to-substrate capacitances. One-stage and folded-cascode OTA´s have been realized to validate the design methodology

Keywords

CMOS analogue integrated circuits; UHF amplifiers; integrated circuit design; integrated circuit modelling; operational amplifiers; silicon-on-insulator; 1 GHz; 1 micron; SOI CMOS operational transconductance amplifier; design; device model; folded-cascode OTA; high frequency transconductance; one-stage OTA; source/drain-to-substrate capacitance; Capacitance; Electrical resistance measurement; Fingers; Frequency dependence; Frequency synthesizers; Operational amplifiers; Poles and zeros; Semiconductor device modeling; Stability; Transconductance; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.663571

Filename

663571