Title :
Scalable Synthesis of Graphene on Patterned Ni and Transfer
Author :
Wang, Yanjie ; Miao, Congqin ; Huang, Bo-Chao ; Zhu, Jing ; Liu, Wei ; Park, Youngju ; Xie, Ya-Hong ; Woo, Jason C S
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
Abstract :
We present an approach to mass produce high-quality graphene on insulator substrate. Ni dots with single or few grains were achieved by annealing. Electron backscattered diffraction indicated that almost all of the Ni dots had (111) surface that is parallel to the substrate. Single-layer graphene with good crystalline quality has been grown on Ni dots. The patterned graphene films were transferred to insulating substrates by wafer bonding and etch back technique, which resulted in zero misalignment, low contamination, and high yield (>90%). Graphene-based field-effect transistors with self-aligned gate were fabricated with this method, which demonstrate the potential of this method as a candidate for mass production of graphene transistors.
Keywords :
annealing; electron backscattering; electron diffraction; field effect transistors; graphene; wafer bonding; C; Ni; annealing; electron backscattered diffraction; etch back method; graphene-based field-effect transistors; insulator substrate; patterned graphene films; self-aligned gate; wafer bonding; Annealing; Carbon; Chemical vapor deposition; Insulators; Nickel; Substrates; Surface treatment; Chemical vapor deposition (CVD); graphene; transfer; transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2076337