DocumentCode
1347537
Title
Memristor Logic Operation Gate With Share Contact RRAM Cell
Author
Shen, Wen Chao ; Tseng, Yuan Heng ; Chih, Y.-D. ; Lin, Chrong Jung
Author_Institution
Microelectron. Lab., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume
32
Issue
12
fYear
2011
Firstpage
1650
Lastpage
1652
Abstract
In this letter, we proposed a novel operation of a share contact resistive random access memory (CRRAM) structure to realize a nonvolatile latch (NV latch) with a single transistor. With a share CRRAM structure and sequential input operations, the NV latch as well as and/ or functions have been successfully demonstrated. The new mixing approach of combining memory and logic in a single unit projects the possibility of new applications for VLSI circuits.
Keywords
VLSI; flip-flops; logic gates; memristors; random-access storage; VLSI circuit; memristor logic operation gate; nonvolatile latch; share contact RRAM cell; share contact resistive random access memory structure; transistor; CMOS integrated circuits; Inverters; Latches; Logic gates; Memristors; Random access memory; Transistors; Contact resistive random access memory (CRRAM); latch; logic gate;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2167313
Filename
6042355
Link To Document