DocumentCode :
1347537
Title :
Memristor Logic Operation Gate With Share Contact RRAM Cell
Author :
Shen, Wen Chao ; Tseng, Yuan Heng ; Chih, Y.-D. ; Lin, Chrong Jung
Author_Institution :
Microelectron. Lab., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
32
Issue :
12
fYear :
2011
Firstpage :
1650
Lastpage :
1652
Abstract :
In this letter, we proposed a novel operation of a share contact resistive random access memory (CRRAM) structure to realize a nonvolatile latch (NV latch) with a single transistor. With a share CRRAM structure and sequential input operations, the NV latch as well as and/ or functions have been successfully demonstrated. The new mixing approach of combining memory and logic in a single unit projects the possibility of new applications for VLSI circuits.
Keywords :
VLSI; flip-flops; logic gates; memristors; random-access storage; VLSI circuit; memristor logic operation gate; nonvolatile latch; share contact RRAM cell; share contact resistive random access memory structure; transistor; CMOS integrated circuits; Inverters; Latches; Logic gates; Memristors; Random access memory; Transistors; Contact resistive random access memory (CRRAM); latch; logic gate;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2167313
Filename :
6042355
Link To Document :
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