Title :
Epitaxial liftoff of AlAs/GaAs double barrier resonant tunnelling diodes
Author :
Tsao, A.J. ; Reddy, Viswanath K. ; Neikirk, D.P.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
3/14/1991 12:00:00 AM
Abstract :
For the first time, the successful removal of AlAs/GaAs double barrier resonant tunnelling diodes from the substrate using the epitaxial liftoff technique is reported. Ohmic contacts were formed to the top and bottom of the devices, using indium-alloyed ohmic contacts for the backside of the lifted-off diodes. Room temperature peak-to-valley ratios of 3.4 with peak current densities of 50 kA/cm2 were obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; ohmic contacts; semiconductor technology; tunnel diodes; AlAs-GaAs; double barrier resonant tunnelling diodes; epitaxial liftoff technique; lifted-off diodes; ohmic contacts; peak current densities; peak-to-valley ratios; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910305
