DocumentCode
1347692
Title
Q and V band power InGaAs MESFETs
Author
Chang, Yuan-Chih
Volume
27
Issue
6
fYear
1991
fDate
3/14/1991 12:00:00 AM
Firstpage
488
Lastpage
489
Abstract
Excellent power performance at 44 and 60 GHz demonstrated by 0.25 mu m gate InGaAs MESFETs is reported. From small-signal S-parameter measurements, these devices typically have extrinsic ft greater than 100 GHz. At 1 dB compression point, a 150 mu m wide MESFET shows a power added efficiency of 33% with an output power of 60.8 mW (0.43 W/mm) at 44 GHz. For 200 mu m wide devices, the power added efficiency was measured to be 19% with an output power of 82 mW (0.41 W/mm) at 60 GHz. These results indicate that InGaAs MESFETs are viable millimetre-wave power devices.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; power transistors; solid-state microwave devices; 0.25 micron; 1 dB compression point; 150 micron; 33 percent; 44 to 100 GHz; 60.8 mW; 82 mW; EHF; InGaAs; MM-waves; Q-band; V-band; millimetre-wave power devices; output power; power MESFETs; power added efficiency; power performance; semiconductors; small-signal S-parameter measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910307
Filename
84720
Link To Document