Title :
Al0.25Ga0.75As/In0.25Ga0.75As pseudomorphic MODFET with high DC and RF performance
Author :
Dickmann, Juergen ; Geyer, A. ; Daembkes, H. ; Nickel, H. ; Losch, R. ; Schlapp, W.
Author_Institution :
Res. Center Ulm, Daimler Benz AG, Germany
fDate :
3/14/1991 12:00:00 AM
Abstract :
AlGaAs/InGaAs MODFETs having 25% indium in the channel and LG=0.35 mu m have been fabricated. From DC device characterisation, a maximum saturation current of 670 mA/mm and an extrinsic transconductance of 500 mS/mm have been measured. A maximum unilateral gain cutoff frequency of fc=205 GHz and a maximum current gain cutoff frequency of fT=86 GHz have been achieved. Bias dependence of fc and fT has been measured. At 12 GHz a minimum noise figure of NF=0.8 dB and an associated gain of 11 dB have been measured.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.35 micron; 0.8 dB; 11 dB; 2.05 GHz; 86 GHz; Al 0.25Ga 0.75As-In 0.25Ga 0.75As; DC device characterisation; DC performance; RF performance; bias dependence; current gain cutoff frequency; extrinsic transconductance; gain; maximum saturation current; noise figure; pseudomorphic HEMT; pseudomorphic MODFET; semiconductors; unilateral gain cutoff frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910315
