Title :
Design and performance of 20 dB gain two-tier matrix distributed amplifier
Author :
D´Agostino, S. ; d´Inzeo, G. ; Marietti, P. ; Panariello, Gaetano
Author_Institution :
Dept. of Electron., Rome Univ., Italy
fDate :
3/14/1991 12:00:00 AM
Abstract :
A matrix distributed amplifier, having a gain of 20 dB with a noise figure of 5 dB in the frequency range between 0.5-12 GHz, is presented. The amplifier, realised in hybrid technology using commercially available GaAs HEMTs, incorporates a novel scheme which allows the biasing of a single stage of the two tier amplifier (two rows of active devices) with a unique controlling resistance and, at the same time, the cascading of the two FETs of each stage. The computed results obtained using a small signal model for each FET fit rather well with the measurements in the whole frequency range.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave amplifiers; semiconductor device models; solid-state microwave circuits; 0.5 to 12 GHz; 20 dB; 5 dB; GaAs; GaAs HEMTs; biasing; cascading of FETs; computed results; controlling resistance; design; frequency range; gain; hybrid technology; matrix distributed amplifier; measurements; noise figure; performance; semiconductors; small signal model; two rows of active devices; two tier amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910318
