• DocumentCode
    1348213
  • Title

    New method for extraction of effective channel length in submicron MOSFETs

  • Author

    Iniewski, K. ; Salama, C.A.T.

  • Author_Institution
    Dept. of Electr. Eng., Toronto Univ., Ont., Canada
  • Volume
    27
  • Issue
    6
  • fYear
    1991
  • fDate
    3/14/1991 12:00:00 AM
  • Firstpage
    508
  • Lastpage
    509
  • Abstract
    A new method for effective channel length extraction in submicron MOSFETS is presented. It is based on measurements of the saturation voltage VDSAT in devices with different channel lengths. The method has been tested using submicron double diffused drain (DDD) MOS devices.
  • Keywords
    insulated gate field effect transistors; semiconductor device models; semiconductor technology; DDD MOSFETs; effective channel length extraction; saturation voltage measurements; submicron MOSFETS;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910319
  • Filename
    84732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1348213