DocumentCode :
1348213
Title :
New method for extraction of effective channel length in submicron MOSFETs
Author :
Iniewski, K. ; Salama, C.A.T.
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Volume :
27
Issue :
6
fYear :
1991
fDate :
3/14/1991 12:00:00 AM
Firstpage :
508
Lastpage :
509
Abstract :
A new method for effective channel length extraction in submicron MOSFETS is presented. It is based on measurements of the saturation voltage VDSAT in devices with different channel lengths. The method has been tested using submicron double diffused drain (DDD) MOS devices.
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor technology; DDD MOSFETs; effective channel length extraction; saturation voltage measurements; submicron MOSFETS;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910319
Filename :
84732
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1348213
بازگشت